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  inchange semiconductor isc product specification isc website www.iscsemi.cn 1 isc silicon pnp power transistor 2SB630 description c ollector-emitter breakdown voltage- : v (br)ceo = -200v(min) complement to type 2sd610 applications audio frequency power amplifier applications. suitable for driver of 200~300 watts audio amplifier. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base v oltage -200 v v ceo collector-emitter v oltage -200 v v ebo emitter-base voltage -5 v i c collector current-continuous -2 a i cm collector current-peak -3.0 a p c collector power dissipation @ t a =25 1.5 w collector power dissipation @ t c =25 25 t j junction temperature 150 t stg storage temperature range -55~150 free datasheet http://www.datasheet-pdf.com/
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon pnp power transistor 2SB630 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce (sat) collector-emitter saturation voltage i c = -0.5a; i b = -50ma -1.0 v v be (sat) base-emitter saturation voltage i c = -0.5a; i b = -50ma -1.5 v i cbo collector cutoff current v cb = -150v; i e = 0 -1.0 a i ebo emitter cutoff current v eb = -3v; i c = 0 -1.0 a h fe-1 dc current gain i c = -5ma; v ce = -10v 20 h fe-2 dc current gain i c = -0.5a; v ce = -10v 40 200 c ob collector output capacitance i e = 0; v cb = -10v; f= 1mhz 65 pf f t current-gainbandwidth product i c = -0.5a; v ce = -10v 4 mhz ? h fe-2 classifications s r q 40-80 60-120 100-200 free datasheet http://www.datasheet-pdf.com/


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